Product Code: 181848
Auckland Showroom: No Stock
Wellington Showroom: No Stock
Logistics Centre: In Stock
Ex Tax: $539.13


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The SSD you trust

The newest edition to the world's best-selling* SATA SSD series, the Samsung 860 EVO is specially designed to enhance performance of mainstream PCs and laptops. With the latest V-NAND technology, this fast and reliable SSD comes in a wide range of compatible form factors and capacities.



Enhanced performance

Speeds are consistent, even under heavy workloads and multi-tasking allowing for faster file transfer. The 860 EVO performs at sequential read speeds up to 550 MB/s* with Intelligent TurboWrite technology, and sequential write speeds up to 520 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to 78 GB.



Boosted endurance

Up to 8x higher TBW (Terabytes Written)* than the 850 EVO. Feel secure storing and rendering large sized 4K videos and 3D data used by the latest applications. The Samsung 860 EVO with V-NAND technology is backed by a 5-year limited warranty



Smart compatibility

Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, and the improved queued trim enhances Linux compatibility.



Multiple form factors

Whatever size your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs and laptops, and the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.




Usage Application
Client PCs

SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface

Storage Capacity
2,000 GB (1 GB=1 Billion byte by IDEMA)

Sequential Read Speed
Up to 550 MB/s Sequential Read

Sequential Write Speed
Up to 520 MB/s Sequential Write

Random Read Speed
Random Read (4KB, QD32): Up to 97,000 IOPS Random Read
Random Read (4KB, QD1): Up to 10,000 IOPS Random Read

Random Write Speed
Random Write (4KB, QD32): Up to 88,000 IOPS Random Write 
Random Write (4KB, QD1): Up to 42,000 IOPS Random Write

Samsung MJX Controller

Samsung V-NAND 3bit MLC

Cache Memory
Samsung 2 GB Low Power DDR4 SDRAM

Trim Support

AES Encryption
AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)

S.M.A.R.T. Support

GC (Garbage Collection)
Auto Garbage Collection Algorithm

WWN Support
World Wide Name supported

Device Sleep Mode Support

Internal Storage

Power Consumption (W)
*Average: 3.0 W
*Maximum: 4.5 W (Burst mode)
*Actual power consumption may vary depending on system hardware & configuration

Reliability (MTBF)
1.5 Million Hours Reliability (MTBF)

Operating Temperature
0 - 70 ?

Operating Temperature Shock
1,500G & 0.5ms (Half sine)

Form Factor

Dimensions (W x D x H)
3.15" X 0.87 " X 0.09"

0.18 lbs.

Management SW
Magician Software for SSD management